| PART |
Description |
Maker |
| 28F256 AM28F256-150JIB AM28F256-120FEB AM28F256-70 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
Advanced Micro Devices
|
| AM28F256 AM28F256-120EC AM28F256-120ECB AM28F256-1 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM28F256A-120EC AM28F256A-120ECB AM28F256A-120EE A |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
|
Advanced Micro Devices
|
| AM27C512-255PC AM27C512-55PC5 AM27C512-200LIB AM27 |
512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
|
Rochester Electronics
|
| IDT728980 IDT728980J IDT728980J8 |
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 5.0V
TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
|
IDT[Integrated Device Technology]
|
| AM29LV256MH113R AM29LV256MH123R AM29LV256MH123RPGI |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
Toshiba Semiconductor
|
| A29L400ATM-70F A29L400ATM-90IF A29L400ATM-70UF A29 |
ER 3C 3#12 PIN PLUG
ER 48C 48#16 PIN RECP 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
Replaced by PT78NR107,PT78ST107,PT78ST174 : 7.15Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
Replaced by PT78ST105 : 5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
ER 48C 48#16 SKT RECP 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
MS3106A16-10SW 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
ER 8C 8#12 SKT RECP
|
http://
Sanyo Denki Co., Ltd.
AMIC Technology, Corp.
AMIC Technology Corporation
|
| AM29F400BB-55FEB AM29F400BB-55FIB AM29F400BT-55FCB |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
http://
|
| STM32F103RET6 STM32F103ZET6 STM32F103ZEH7 STM32F10 |
256 to 512 Kbytes of Flash memory
High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces
|
STMicroelectronics
|
| PCF85103C-2P/0011 |
256 x 8-bit CMOS EEPROM with I2C-bus interface; Package: SOT97-1 (DIP8); Container: Tube 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
|
NXP Semiconductors N.V.
|
